SAMSUNG 860 EVO Series M.2 2280 500GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E500BW

Brand

SamSung

Products Status

New

Application

Desktop

Series

Samsung 860 EVO

Model

MZ-N6E500BW

Brand	SamSung
Products Status	New
Application	Desktop
Series	Samsung 860 EVO
Model	MZ-N6E500BW
Device Type	Internal Solid State Drive (SSD)
Used For	Consumer
Form Factor	M.2 2280
Capacity	500GB
Memory Components	V-NAND 3-bit MLC
Interface	SATA III
Controller	Samsung MJX Controller
Cache	Samsung 512MB Low Power DDR4 SDRAM
Max Sequential Read	Up to 550 MBps
Max Sequential Write	Up to 520 MBps
4KB Random Read	QD1: Up to 10,000 IOPS, QD32: Up to 97,000 IOPS
4KB Random Write	QD1: Up to 42,000 IOPS, QD32: Up to 88,000 IOPS
MTBF	1,500,000 hours
Features	AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive), Device Sleep Mode Support, GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T. Support, WWN Support: World Wide Name supported
Power Consumption (Idle)	50 mW
Power Consumption (Active)	Average: 2.5W, Maximum: 4.0W (Burst mode)
Operating Temperature	0??C ~ +70??C
Storage Temperature	-45??C ~ +85??C
Operating Humidity	5% to 95% RH
Max Shock Resistance	1,500G & 0.5 ms (Half sine)
Max Vibration Resistance	20G
Height	2.30mm
Width	22.00mm