| Brand | SamSung |
|---|---|
| Products Status | New |
| Application | Desktop |
| Series | Samsung 860 EVO |
| Model | MZ-N6E250BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 250GB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | SATA III |
| Controller | MJX |
| Cache | 0MB |
| Max Sequential Read | Up to 550 MBps |
| Max Sequential Write | Up to 520 MBps |
| 4KB Random Read | Random (QD1): Up to 10,000 IOPS; Random (QD32): Up to 97,000 IOPS |
| 4KB Random Write | Random (QD1): Up to 42,000 IOPS; Random (QD32): Up to 88,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | 1.TBW: 150TB; 2.Data Security: AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive(IEEE1667); 3.Supporting Features: TRIM (Required OS support), Garbage Collection, S.M.A.R.T |
| Power Consumption (Idle) | 50 mW |
| Power Consumption (Active) | 2.2 W |
| Operating Temperature | 0??C ~ +70??C |
| Storage Temperature | -45??C ~ +85??C |
| Operating Humidity | 5% to 95% RH |
| Max Shock Resistance | 1500G |
| Max Vibration Resistance | 20G |
| Height | 2.30mm |
| Width | 22.00mm |
SAMSUNG 860 EVO Series M.2 2280 250GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E250BW
| Brand | SamSung |
|---|---|
| Products Status | New |
| Application | Desktop |
| Series | Samsung 860 EVO |
| Model | MZ-N6E250BW |
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