Brand | SamSung |
---|---|
Products Status | New |
Application | Desktop |
Series | Samsung 850 EVO |
Model | MZ-N5E1T0BW |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
Capacity | 1TB |
Memory Components | 3D NAND |
Interface | SATA III |
Controller | MGX |
Max Sequential Read | Up to 540 MBps |
Max Sequential Write | Up to 500 MBps |
4KB Random Read | Up to 10,000 IOPS (QD1), Up to 97,000 IOPS (QD32) |
4KB Random Write | Up to 40,000 IOPS (QD1), Up to 89,000 IOPS (QD32) |
MTBF | 1,500,000 hours |
Power Consumption (Idle) | 50mW |
Power Consumption (Active) | 2.3W/2.7W (Read/Write) |
Operating Temperature | 0??C ~ +70??C |
Storage Temperature | -40??C ~ +85??C |
Operating Humidity | 5% to 95% RH |
Max Shock Resistance | 1500G |
Max Vibration Resistance | 20G |
Height | 2.30mm |
Width | 22.00mm |
Depth | 80.00mm |
Weight | 40.00g |
SAMSUNG 850 EVO M.2 2280 1TB SATA III 3D NAND Internal Solid State Drive (SSD) MZ-N5E1T0BW
Brand | SamSung |
---|---|
Products Status | New |
Application | Desktop |
Series | Samsung 850 EVO |
Model | MZ-N5E1T0BW |
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